Dislocation Density Reduction During Impurity Gettering in Multicrystalline Silicon

Dislocation Density Reduction in Multicrystalline Silicon through Cyclic Annealing

Multicrystalline silicon solar cells are an important renewable energy technology that have the potential to provide the world with much of its energy. While they are relatively inexpensive, their efficiency is limited by material defects, and in particular by dislocations. Reducing dislocation densities in multicrystalline silicon solar cells could greatly increase their efficiency while only ...

Hydrogenation effect on low temperature internal gettering in multicrystalline silicon

We have performed a comprehensive study into low temperature ( 500 °C) internal gettering in multicrystalline silicon (mc-Si). Two groups of as-grown mc-Si wafers from different ingot height positions were subjected to the same thermal treatments with surface passivation by either silicon nitride (SiNx:H) or a temporary iodine-ethanol (I-E) chemical solution . With either passivation scheme, l...

Phosphorus diffusion gettering process of multicrystalline silicon using a sacrificial porous silicon layer

The aims of this work are to getter undesirable impurities from low-cost multicrystalline silicon (mc-Si) wafers and then enhance their electronic properties. We used an efficient process which consists of applying phosphorus diffusion into a sacrificial porous silicon (PS) layer in which the gettered impurities have been trapped after the heat treatment. As we have expected, after removing the...

Low-Temperature Saw Damage Gettering to Improve Minority Carrier Lifetime in Multicrystalline Silicon

Increasing minority carrier lifetime in as-grown multicrystalline silicon by low temperature internal gettering

(2016) Increasing minority carrier lifetime in as-grown multicrystalline silicon by low temperature internal gettering. Copyright and reuse: The Warwick Research Archive Portal (WRAP) makes this work of researchers of the University of Warwick available open access under the following conditions. This article is made available under the Creative Commons Attribution 4.0 International license (CC...